Surface Science Integration Inc (USA)

Surface Science Integration excels in the development of advanced Rapid Thermal Processors. Our Rapid Thermal Processors allow us to heat silicon wafers up to 1300 °C +in a matter of several seconds. This Rapid heating and slow cooling gives us the ability to modify the electrical properties of the wafers.



The Rapid Thermal Annealing process can be used to activate dopants, change the film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation move or drive dopants from one film into another or from a film into the wafer substrate